| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| BCM8220 |
2.488/ 2.667 GBPS ULTRA LOW POWE SONET/SDH TRANSCEIVER
|
BOARDCOM[Broadcom Corporation.]
|
| NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1%
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE72118-T2 NE72118 NE72118-T1 |
C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET
|
NEC[NEC]
|
| UPA800T UPA800T-T1 UPA800T-KB |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
|
NEC[NEC]
|
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| 2N3823 MQ2N3821 |
N-CHANNEL J-FET DEPLETION MODE
N Channel JFET; Package: TO-72; VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF
|
Microsemi Corporation
Microsemi, Corp.
|
| CHV2243 CHV2243-99F_00 CHV2243-99F/00 |
Fully Integrated Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
UMS[United Monolithic Semiconductors]
|
| TDA4601 |
PWM Control IC for Switched Mode Powe...
From old datasheet system
Control ICs for Switched-Mode Power Supplies
|
Infineon
|
| PMBF5484 PMBF5486 PMBF5485 |
2G,FS/FD CVR,GSKT& SCRS,ALUM,DX UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
N-channel field-effect transistors
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
